Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias
We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capa...
| Main Authors: | , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2014
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| Online Access: | https://eprints.nottingham.ac.uk/34555/ |