Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As

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Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As

We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of properties inhibits domain formation, thus removing a...

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Bibliographic Details
Main Authors:	Wang, Mu, Marshall, Robin Alexander, Edmonds, Kevin W., Rushforth, A.W., Campion, R.P., Gallagher, B.L.
Format:	Article
Published:	American Physical Society 2016
Online Access:	https://eprints.nottingham.ac.uk/34348/

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