Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As
We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of properties inhibits domain formation, thus removing a...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Published: |
American Physical Society
2016
|
| Online Access: | https://eprints.nottingham.ac.uk/34348/ |