A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs

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A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs

The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations a...

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Bibliographic Details
Main Authors:	Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto, Irace, Andrea
Format:	Article
Published:	IEEE 2016
Subjects:	Short-circuit failure mechanism short-circuit ruggedness Silicon Carbide (SiC) Power MOSFETs thermal runaway
Online Access:	https://eprints.nottingham.ac.uk/33509/

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