A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs
The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations a...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
IEEE
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/33509/ |