A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs
The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations a...
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| Format: | Article |
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IEEE
2016
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| Online Access: | https://eprints.nottingham.ac.uk/33509/ |
| _version_ | 1848794646883336192 |
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| author | Romano, Gianpaolo Fayyaz, Asad Riccio, Michele Maresca, Luca Breglio, Giovanni Castellazzi, Alberto Irace, Andrea |
| author_facet | Romano, Gianpaolo Fayyaz, Asad Riccio, Michele Maresca, Luca Breglio, Giovanni Castellazzi, Alberto Irace, Andrea |
| author_sort | Romano, Gianpaolo |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations, and are reported along with their effects on devices short-circuit capability. |
| first_indexed | 2025-11-14T19:19:30Z |
| format | Article |
| id | nottingham-33509 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:19:30Z |
| publishDate | 2016 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-335092020-05-04T20:01:21Z https://eprints.nottingham.ac.uk/33509/ A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs Romano, Gianpaolo Fayyaz, Asad Riccio, Michele Maresca, Luca Breglio, Giovanni Castellazzi, Alberto Irace, Andrea The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations, and are reported along with their effects on devices short-circuit capability. IEEE 2016-09 Article PeerReviewed Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto and Irace, Andrea (2016) A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4 (3). pp. 978-987. ISSN 2168-6785 Short-circuit failure mechanism short-circuit ruggedness Silicon Carbide (SiC) Power MOSFETs thermal runaway http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7464825&refinements%3D4225669346%26filter%3DAND%28p_IS_Number%3A6507303%29 doi:10.1109/JESTPE.2016.2563220 doi:10.1109/JESTPE.2016.2563220 |
| spellingShingle | Short-circuit failure mechanism short-circuit ruggedness Silicon Carbide (SiC) Power MOSFETs thermal runaway Romano, Gianpaolo Fayyaz, Asad Riccio, Michele Maresca, Luca Breglio, Giovanni Castellazzi, Alberto Irace, Andrea A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs |
| title | A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs |
| title_full | A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs |
| title_fullStr | A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs |
| title_full_unstemmed | A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs |
| title_short | A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs |
| title_sort | comprehensive study of the short-circuit ruggedness of silicon carbide power mosfets |
| topic | Short-circuit failure mechanism short-circuit ruggedness Silicon Carbide (SiC) Power MOSFETs thermal runaway |
| url | https://eprints.nottingham.ac.uk/33509/ https://eprints.nottingham.ac.uk/33509/ https://eprints.nottingham.ac.uk/33509/ |