A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs

A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs

The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations a...

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Bibliographic Details
Main Authors: Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto, Irace, Andrea
Format: Article
Published: IEEE 2016
Subjects:
Short-circuit failure mechanism
short-circuit ruggedness
Silicon Carbide (SiC) Power MOSFETs
thermal runaway
Online Access:https://eprints.nottingham.ac.uk/33509/
Description
Summary:The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations, and are reported along with their effects on devices short-circuit capability.

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