Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters
In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibiliti...
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IEEE
2016
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| Online Access: | https://eprints.nottingham.ac.uk/33507/ |
| _version_ | 1848794646292987904 |
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| author | Gurpinar, Emre Yang, Yongheng Iannuzzo, Francesco Castellazzi, Alberto Blaabjerg, Frede |
| author_facet | Gurpinar, Emre Yang, Yongheng Iannuzzo, Francesco Castellazzi, Alberto Blaabjerg, Frede |
| author_sort | Gurpinar, Emre |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibilities: 1) with TIM at 10 kHz, 2) without TIM at 10 kHz, and 3) with TIM at 300 kHz has been performed. The assessment results indicate lower thermal stress with GaN HEMT devices at 10 kHz in comparison to Si IGBT. At high switching frequencies, the results show significant system level cost savings can be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide-bandgap devices. |
| first_indexed | 2025-11-14T19:19:30Z |
| format | Article |
| id | nottingham-33507 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:19:30Z |
| publishDate | 2016 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-335072020-05-04T17:53:13Z https://eprints.nottingham.ac.uk/33507/ Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters Gurpinar, Emre Yang, Yongheng Iannuzzo, Francesco Castellazzi, Alberto Blaabjerg, Frede In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibilities: 1) with TIM at 10 kHz, 2) without TIM at 10 kHz, and 3) with TIM at 300 kHz has been performed. The assessment results indicate lower thermal stress with GaN HEMT devices at 10 kHz in comparison to Si IGBT. At high switching frequencies, the results show significant system level cost savings can be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide-bandgap devices. IEEE 2016-05-04 Article PeerReviewed Gurpinar, Emre, Yang, Yongheng, Iannuzzo, Francesco, Castellazzi, Alberto and Blaabjerg, Frede (2016) Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters. IEEE Journal of Emerging and Selected Topics in Power Electronics . ISSN 2168-6785 (In Press) Wide bandgap (WBG) power devices; galliumnitride (GaN); photovoltaic (PV) systems; reliability; thermal loading analysis; three-level active neutral point clamped (3L-ANPC) converter; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon; Silicon carbide http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7467395 doi:10.1109/JESTPE.2016.2566259 doi:10.1109/JESTPE.2016.2566259 |
| spellingShingle | Wide bandgap (WBG) power devices; galliumnitride (GaN); photovoltaic (PV) systems; reliability; thermal loading analysis; three-level active neutral point clamped (3L-ANPC) converter; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon; Silicon carbide Gurpinar, Emre Yang, Yongheng Iannuzzo, Francesco Castellazzi, Alberto Blaabjerg, Frede Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters |
| title | Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters |
| title_full | Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters |
| title_fullStr | Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters |
| title_full_unstemmed | Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters |
| title_short | Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters |
| title_sort | reliability-driven assessment of gan hemts and si igbts in 3l-anpc pv inverters |
| topic | Wide bandgap (WBG) power devices; galliumnitride (GaN); photovoltaic (PV) systems; reliability; thermal loading analysis; three-level active neutral point clamped (3L-ANPC) converter; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon; Silicon carbide |
| url | https://eprints.nottingham.ac.uk/33507/ https://eprints.nottingham.ac.uk/33507/ https://eprints.nottingham.ac.uk/33507/ |