Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters

Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters

In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibiliti...

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Bibliographic Details
Main Authors: Gurpinar, Emre, Yang, Yongheng, Iannuzzo, Francesco, Castellazzi, Alberto, Blaabjerg, Frede
Format: Article
Published: IEEE 2016
Subjects:
Wide bandgap (WBG) power devices; galliumnitride (GaN); photovoltaic (PV) systems; reliability; thermal loading analysis; three-level active neutral point clamped (3L-ANPC) converter; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon; Silicon carbide
Online Access:https://eprints.nottingham.ac.uk/33507/

Internet

https://eprints.nottingham.ac.uk/33507/

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