A physics-based compact model of SiC power MOSFETs

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A physics-based compact model of SiC power MOSFETs

The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge...

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Bibliographic Details
Main Authors:	Kraus, Rainer, Castellazzi, Alberto
Format:	Article
Published:	IEEE 2016
Subjects:	Compact model drain resistance interface traps Power MOSFET silicon carbide
Online Access:	https://eprints.nottingham.ac.uk/33381/

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