A physics-based compact model of SiC power MOSFETs
The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge...
| Main Authors: | , |
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| Format: | Article |
| Published: |
IEEE
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/33381/ |