A physics-based compact model of SiC power MOSFETs
The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge...
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| Format: | Article |
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IEEE
2016
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| Online Access: | https://eprints.nottingham.ac.uk/33381/ |
| _version_ | 1848794618786742272 |
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| author | Kraus, Rainer Castellazzi, Alberto |
| author_facet | Kraus, Rainer Castellazzi, Alberto |
| author_sort | Kraus, Rainer |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results. |
| first_indexed | 2025-11-14T19:19:04Z |
| format | Article |
| id | nottingham-33381 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:19:04Z |
| publishDate | 2016 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-333812020-05-04T20:01:44Z https://eprints.nottingham.ac.uk/33381/ A physics-based compact model of SiC power MOSFETs Kraus, Rainer Castellazzi, Alberto The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results. IEEE 2016-08 Article PeerReviewed Kraus, Rainer and Castellazzi, Alberto (2016) A physics-based compact model of SiC power MOSFETs. IEEE Transactions on Power Electronics, 31 (8). pp. 5863-5870. ISSN 0885-8993 Compact model drain resistance interface traps Power MOSFET silicon carbide http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7293697&tag=1 doi:10.1109/TPEL.2015.2488106 doi:10.1109/TPEL.2015.2488106 |
| spellingShingle | Compact model drain resistance interface traps Power MOSFET silicon carbide Kraus, Rainer Castellazzi, Alberto A physics-based compact model of SiC power MOSFETs |
| title | A physics-based compact model of SiC power MOSFETs |
| title_full | A physics-based compact model of SiC power MOSFETs |
| title_fullStr | A physics-based compact model of SiC power MOSFETs |
| title_full_unstemmed | A physics-based compact model of SiC power MOSFETs |
| title_short | A physics-based compact model of SiC power MOSFETs |
| title_sort | physics-based compact model of sic power mosfets |
| topic | Compact model drain resistance interface traps Power MOSFET silicon carbide |
| url | https://eprints.nottingham.ac.uk/33381/ https://eprints.nottingham.ac.uk/33381/ https://eprints.nottingham.ac.uk/33381/ |