Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs

QR Code

Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs

In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume and dead-time effect for each technology is...

Full description

Bibliographic Details
Main Authors:	Gurpinar, Emre, Castellazzi, Alberto
Format:	Article
Published:	IEEE 2016
Subjects:	Multilevel systems Power conversion Power electronics Power MOSFETs Insulated Gate Bipolar Transistors Power Semiconductor Switches Inverters
Online Access:	https://eprints.nottingham.ac.uk/33352/

Similar Items

Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2015)

Experimental efficiency comparison between a direct matrix converter and an indirect matrix converter based on efficiency using Si IGBT and SiC MOSFETs
by: Trentin, Andrew, et al.
Published: (2016)

Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs
by: Trentin, Andrew, et al.
Published: (2015)

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling
by: Hussein, Abdallah, et al.
Published: (2018)

Built-in reliability design of a high-frequency SiC MOSFET power module
by: Li, Jianfeng, et al.
Published: (2014)

Modular integrated SiC MOSFET matrix converter
by: Aliyu, Attahir Murtala, et al.
Published: (2017)

Impulse transformer based secondary-side self-powered gate-driver for wide-range PWM operation of SiC power MOSFETs
by: Garcia, Jorge, et al.
Published: (2016)

A new single-stage current source inverter for photovoltaic and fuel cell applications using reverse blocking IGBTs
by: Klumpner, Christian
Published: (2007)

SiC power MOSFETs performance, robustness and technology maturity
by: Castellazzi, Alberto, et al.
Published: (2016)

Body diode reliability investigation of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2016)

A physics-based compact model of SiC power MOSFETs
by: Kraus, Rainer, et al.
Published: (2016)

Integrated bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly
by: Lasserre, Philippe, et al.
Published: (2016)

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2017)

Testing of a lightweight SiC power module for avionic applications
by: Gurpinar, Emre, et al.
Published: (2014)

High temperature pulsed-gate robustness testing of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2015)

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2014)

High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
by: Garcia, Jorge, et al.
Published: (2017)

Transient out-of-SOA robustness of SiC power MOSFETs
by: Castellazzi, Alberto, et al.
Published: (2017)

Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters
by: Gurpinar, Emre, et al.
Published: (2016)

A physical RC network model for electro-thermal analysis of a multichip SiC power module
by: Li, Jianfeng, et al.
Published: (2017)

Performance and robustness characterisation of SiC power MOSFETs
by: Fayyaz, Asad
Published: (2018)

Full SiC Version of the EDA5 Inverter
by: Chowdhury, Shajjad, et al.
Published: (2017)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)

Design and development of a high-density, high-speed 10 kV SiC MOSFET module
by: Di Marino, Christina, et al.
Published: (2017)

UIS failure mechanism of SiC power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2016)

Performance evaluation of a 3-level ANPC photovoltaic grid-connected inverter with 650V SiC devices and optimized PWM
by: Barater, Davide, et al.
Published: (2016)

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs
by: Romano, Gianpaolo, et al.
Published: (2016)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

Experimental and analytical performance evaluation of SiC power devices in the matrix converter
by: Safari, Saeed, et al.
Published: (2014)

Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile
by: O'Donnell, Shane, et al.
Published: (2016)

SiC-based power electronics for wind energy applications
by: Hussein, Abdallah Suliman
Published: (2019)

Wide-bandgap semiconductor based power converters for renewable energy systems
by: Gurpinar, Emre
Published: (2017)

Overload robust IGBT design for SSCB application
by: Supono, I., et al.
Published: (2014)

Silicon carbide (SiC) insulated gate bipolar transistors (IGBTs) for high voltage applications
by: Almpanis, Ioannis
Published: (2024)

Tradeoff study of heat sink and output filter volume in a GaN HEMT based single-phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)

Trade-off study of heat sink and output filter volume in a GaN HEMT based single phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)

The parallel resonant DC link inverter: a soft-switching inverter topology with PWM capability
by: Krogemann, Markus
Published: (1997)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

Low parasitic inductance multi-chip SiC devices packaging technology
by: Li, Jianfeng, et al.
Published: (2016)

Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch
by: Cova, P., et al.
Published: (2017)