Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs
In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume and dead-time effect for each technology is...
| Main Authors: | , |
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| Format: | Article |
| Published: |
IEEE
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/33352/ |