Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement

Transient thermal impedancemeasurement is commonly used to characterize the dynamic behaviour of the heat flowpath in power semiconductor packages. This can be used to derive a “structure function”which is a graphical representation of the internal structure of the thermal stack. Changes in the stru...

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Main Authors: Eleffendi, Mohd. Amir, Yang, Li, Agyakwa, Pearl, Johnson, C. Mark
Format: Article
Published: Elsevier 2016
Subjects:
Online Access:https://eprints.nottingham.ac.uk/32823/
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author Eleffendi, Mohd. Amir
Yang, Li
Agyakwa, Pearl
Johnson, C. Mark
author_facet Eleffendi, Mohd. Amir
Yang, Li
Agyakwa, Pearl
Johnson, C. Mark
author_sort Eleffendi, Mohd. Amir
building Nottingham Research Data Repository
collection Online Access
description Transient thermal impedancemeasurement is commonly used to characterize the dynamic behaviour of the heat flowpath in power semiconductor packages. This can be used to derive a “structure function”which is a graphical representation of the internal structure of the thermal stack. Changes in the structure function can thus be used as a non-destructive testing tool for detecting and locating defects in the thermal path. This paper evaluates the use of the structure function for testing the integrity of the thermal path in high powermulti-chipmodules. A 1.2 kV/200 A IGBT module is subjected to power cycling with a constant current. The structure function is used to estimate the level of disruption at the interface between the substrate and the baseplate/case. Comparison with estimations of cracked area obtained by scanning acoustic microscopy (SAM) imaging shows excellent agreement, demonstrating that the structure function can be used as a quantitative tool for estimating the level of degradation. Metallurgical cross-sectioning confirms that the degradation is due to fatigue cracking of the substrate mount-down solder.
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spelling nottingham-328232020-05-04T17:38:43Z https://eprints.nottingham.ac.uk/32823/ Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement Eleffendi, Mohd. Amir Yang, Li Agyakwa, Pearl Johnson, C. Mark Transient thermal impedancemeasurement is commonly used to characterize the dynamic behaviour of the heat flowpath in power semiconductor packages. This can be used to derive a “structure function”which is a graphical representation of the internal structure of the thermal stack. Changes in the structure function can thus be used as a non-destructive testing tool for detecting and locating defects in the thermal path. This paper evaluates the use of the structure function for testing the integrity of the thermal path in high powermulti-chipmodules. A 1.2 kV/200 A IGBT module is subjected to power cycling with a constant current. The structure function is used to estimate the level of disruption at the interface between the substrate and the baseplate/case. Comparison with estimations of cracked area obtained by scanning acoustic microscopy (SAM) imaging shows excellent agreement, demonstrating that the structure function can be used as a quantitative tool for estimating the level of degradation. Metallurgical cross-sectioning confirms that the degradation is due to fatigue cracking of the substrate mount-down solder. Elsevier 2016-04-01 Article PeerReviewed Eleffendi, Mohd. Amir, Yang, Li, Agyakwa, Pearl and Johnson, C. Mark (2016) Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement. Microelectronics Reliability, 59 . pp. 73-83. ISSN 0026-2714 Structure function Reliability Power modules Solder fatigue http://www.sciencedirect.com/science/article/pii/S0026271416300026 doi:10.1016/j.microrel.2016.01.002 doi:10.1016/j.microrel.2016.01.002
spellingShingle Structure function
Reliability
Power modules
Solder fatigue
Eleffendi, Mohd. Amir
Yang, Li
Agyakwa, Pearl
Johnson, C. Mark
Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
title Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
title_full Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
title_fullStr Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
title_full_unstemmed Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
title_short Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
title_sort quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement
topic Structure function
Reliability
Power modules
Solder fatigue
url https://eprints.nottingham.ac.uk/32823/
https://eprints.nottingham.ac.uk/32823/
https://eprints.nottingham.ac.uk/32823/