Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source
Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviol...
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| Format: | Article |
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Wiley-VCH Verlag Gmbh & Co
2016
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| Online Access: | https://eprints.nottingham.ac.uk/32814/ |
| _version_ | 1848794495258198016 |
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| author | Novikov, Sergei V. Staddon, C.R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. |
| author_facet | Novikov, Sergei V. Staddon, C.R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. |
| author_sort | Novikov, Sergei V. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able. |
| first_indexed | 2025-11-14T19:17:06Z |
| format | Article |
| id | nottingham-32814 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:17:06Z |
| publishDate | 2016 |
| publisher | Wiley-VCH Verlag Gmbh & Co |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-328142020-05-04T20:02:47Z https://eprints.nottingham.ac.uk/32814/ Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source Novikov, Sergei V. Staddon, C.R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able. Wiley-VCH Verlag Gmbh & Co 2016-05 Article PeerReviewed Novikov, Sergei V., Staddon, C.R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J. and Foxon, C.T. (2016) Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. Physica Status Solidi C: Current Topics in Solid State Physics, 13 (5-6). pp. 217-220. ISSN 1862-6351 Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates http://onlinelibrary.wiley.com/doi/10.1002/pssc.201510166/abstract doi:10.1002/pssc.201510166 doi:10.1002/pssc.201510166 |
| spellingShingle | Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates Novikov, Sergei V. Staddon, C.R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source |
| title | Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source |
| title_full | Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source |
| title_fullStr | Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source |
| title_full_unstemmed | Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source |
| title_short | Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source |
| title_sort | molecular beam epitaxy of free-standing bulk wurtzite alxga1-xn layers using a highly efficient rf plasma source |
| topic | Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates |
| url | https://eprints.nottingham.ac.uk/32814/ https://eprints.nottingham.ac.uk/32814/ https://eprints.nottingham.ac.uk/32814/ |