Resonant tunnelling in semiconductor heterostructures

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Resonant tunnelling in semiconductor heterostructures

This thesis examines the electrical transport properties of a series of n-type GaAs/(AIGa)As double barrier resonant tunnelling devices with well widths between 50 angstrem and 2400 angstrem . The current-voltage characteristics show peak-to-valley ratios as high as 25:1 and as many as seventy reson...

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Bibliographic Details
Main Author:	Leadbeater, Mark Levence
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	1990
Online Access:	https://eprints.nottingham.ac.uk/28733/

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