Resonant tunnelling in semiconductor heterostructures
This thesis examines the electrical transport properties of a series of n-type GaAs/(AIGa)As double barrier resonant tunnelling devices with well widths between 50 angstrem and 2400 angstrem . The current-voltage characteristics show peak-to-valley ratios as high as 25:1 and as many as seventy reson...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
1990
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| Online Access: | https://eprints.nottingham.ac.uk/28733/ |