Structural and electrical characterization of AuPtAlTi ohmic
contacts to AlGaN/GaN with varying annealing temperature and
Al content

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Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface pl...

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Bibliographic Details
Main Authors:	Fay, Mike W., Han, Y., Brown, Paul D., Harrison, Ian, Hilton, K.P., Munday, A., Wallis, D., Balmer, R.S., Uren, M.J., Martin, T.
Format:	Article
Published:	American Institute of Physics 2008
Subjects:	N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE
Online Access:	https://eprints.nottingham.ac.uk/1526/

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