Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface pl...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2008
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/1526/ |