Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface pl...

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Main Authors:	Fay, Mike W., Han, Y., Brown, Paul D., Harrison, Ian, Hilton, K.P., Munday, A., Wallis, D., Balmer, R.S., Uren, M.J., Martin, T.
Format:	Article
Published:	American Institute of Physics 2008
Subjects:	N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE
Online Access:	https://eprints.nottingham.ac.uk/1526/

_version_	1848790623733153792
author	Fay, Mike W. Han, Y. Brown, Paul D. Harrison, Ian Hilton, K.P. Munday, A. Wallis, D. Balmer, R.S. Uren, M.J. Martin, T.
author_facet	Fay, Mike W. Han, Y. Brown, Paul D. Harrison, Ian Hilton, K.P. Munday, A. Wallis, D. Balmer, R.S. Uren, M.J. Martin, T.
author_sort	Fay, Mike W.
building	Nottingham Research Data Repository
collection	Online Access
description	The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.
first_indexed	2025-11-14T18:15:34Z
format	Article
id	nottingham-1526
institution	University of Nottingham Malaysia Campus
institution_category	Local University
last_indexed	2025-11-14T18:15:34Z
publishDate	2008
publisher	American Institute of Physics
recordtype	eprints
repository_type	Digital Repository
spelling	nottingham-15262020-05-04T16:27:23Z https://eprints.nottingham.ac.uk/1526/ Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content Fay, Mike W. Han, Y. Brown, Paul D. Harrison, Ian Hilton, K.P. Munday, A. Wallis, D. Balmer, R.S. Uren, M.J. Martin, T. The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts. American Institute of Physics 2008-04-01 Article NonPeerReviewed Fay, Mike W., Han, Y., Brown, Paul D., Harrison, Ian, Hilton, K.P., Munday, A., Wallis, D., Balmer, R.S., Uren, M.J. and Martin, T. (2008) Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content. Journal of Applied Physics, 103 (7). 074501. ISSN 0021-8979 N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE http://jap.aip.org/resource/1/japiau/v103/i7/p074501_s1 10.1063/1.2890978 10.1063/1.2890978 10.1063/1.2890978
spellingShingle	N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE Fay, Mike W. Han, Y. Brown, Paul D. Harrison, Ian Hilton, K.P. Munday, A. Wallis, D. Balmer, R.S. Uren, M.J. Martin, T. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
title	Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
title_full	Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
title_fullStr	Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
title_full_unstemmed	Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
title_short	Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
title_sort	structural and electrical characterization of auptalti ohmic contacts to algan/gan with varying annealing temperature and al content
topic	N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE
url	https://eprints.nottingham.ac.uk/1526/ https://eprints.nottingham.ac.uk/1526/ https://eprints.nottingham.ac.uk/1526/

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

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