Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface pl...

Full description

Bibliographic Details
Main Authors: Fay, Mike W., Han, Y., Brown, Paul D., Harrison, Ian, Hilton, K.P., Munday, A., Wallis, D., Balmer, R.S., Uren, M.J., Martin, T.
Format: Article
Published: American Institute of Physics 2008
Subjects:
N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE
Online Access:https://eprints.nottingham.ac.uk/1526/
Description
Summary:The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.

Similar Items