Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

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Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark field imaging have been used to appraise the Mn d...

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Bibliographic Details
Main Authors:	Fay, Mike W., Han, Y., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Staddon, C.R., Foxon, C.T., Brown, Paul D.
Other Authors:	Cullis, A.G.
Format:	Book Section
Published:	Springer-Verlag 2008
Subjects:	TEM spintronics GaMnN MBE
Online Access:	https://eprints.nottingham.ac.uk/1471/

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