Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark field imaging have been used to appraise the Mn d...

Full description

Bibliographic Details
Main Authors: Fay, Mike W., Han, Y., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Staddon, C.R., Foxon, C.T., Brown, Paul D.
Other Authors: Cullis, A.G.
Format: Book Section
Published: Springer-Verlag 2008
Subjects:
TEM
spintronics
GaMnN
MBE
Online Access:https://eprints.nottingham.ac.uk/1471/

Internet

https://eprints.nottingham.ac.uk/1471/

Similar Items