Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN

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Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN

Ti/Al/Ti/Au and Ti/Al/Pd/Au contacts to AlGaN/GaN have been investigated to ascertain the effect of annealing temperature on the structural evolution of the contacts. Ti/Al/Ti/Au contacts become ohmic after rapid thermal annealing at 750°C or higher, corresponding to the formation of an interfacial...

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Bibliographic Details
Main Authors:	Fay, Mike W., Harrison, Ian, Birbeck, J.C., Hughes, B.T., Uren, M.J., Martin, T., Brown, Paul D.
Other Authors:	Aindow, M.
Format:	Book Section
Published:	IOP Publishing Ltd 2001
Subjects:	TEM TiAlTiAu TiAlPdAu AlGaN/GaN ohmic contact
Online Access:	https://eprints.nottingham.ac.uk/1468/

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