EBIC study of Au / n-type GaN Schottky contacts

The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures o...

Full description

Bibliographic Details
Main Authors: Moldovan, Grigore, Harrison, Ian, Brown, Paul D.
Other Authors: Cullis, A.G.
Format: Book Section
Published: IOP Publishing Ltd 2003
Subjects:
Online Access:https://eprints.nottingham.ac.uk/1464/
_version_ 1848790611647266816
author Moldovan, Grigore
Harrison, Ian
Brown, Paul D.
author2 Cullis, A.G.
author_facet Cullis, A.G.
Moldovan, Grigore
Harrison, Ian
Brown, Paul D.
author_sort Moldovan, Grigore
building Nottingham Research Data Repository
collection Online Access
description The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect.
first_indexed 2025-11-14T18:15:22Z
format Book Section
id nottingham-1464
institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T18:15:22Z
publishDate 2003
publisher IOP Publishing Ltd
recordtype eprints
repository_type Digital Repository
spelling nottingham-14642020-05-04T20:32:05Z https://eprints.nottingham.ac.uk/1464/ EBIC study of Au / n-type GaN Schottky contacts Moldovan, Grigore Harrison, Ian Brown, Paul D. The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect. IOP Publishing Ltd Cullis, A.G. Midgley, P.A. 2003 Book Section PeerReviewed Moldovan, Grigore, Harrison, Ian and Brown, Paul D. (2003) EBIC study of Au / n-type GaN Schottky contacts. In: Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003. Institute of Physics conference series (180). IOP Publishing Ltd, Bristol, pp. 577-580. ISBN 9780750309790 EBIC Schottky contact GaN
spellingShingle EBIC
Schottky contact
GaN
Moldovan, Grigore
Harrison, Ian
Brown, Paul D.
EBIC study of Au / n-type GaN Schottky contacts
title EBIC study of Au / n-type GaN Schottky contacts
title_full EBIC study of Au / n-type GaN Schottky contacts
title_fullStr EBIC study of Au / n-type GaN Schottky contacts
title_full_unstemmed EBIC study of Au / n-type GaN Schottky contacts
title_short EBIC study of Au / n-type GaN Schottky contacts
title_sort ebic study of au / n-type gan schottky contacts
topic EBIC
Schottky contact
GaN
url https://eprints.nottingham.ac.uk/1464/