TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN

Ti and Pd barrier layers between the Al/Ti diffusion couple and the Au capping layer of multilayer ohmic contacts to n-type AlGaN/GaN field effect transistors were found to be ineffective in preventing the diffusion of Au to the AlGaN following high temperature rapid thermal annealing. The formation...

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Bibliographic Details
Main Authors: Fay, Mike W., Moldovan, Grigore, Harrison, Ian, Balmer, R.S., Soley, D.E.J., Hilton, K.P., Hughes, B.T., Uren, M.J., Martin, T., Brown, Paul D.
Other Authors: Cullis, A.G.
Format: Book Section
Published: IOP Publishing Ltd 2003
Subjects:
TEM
ohmic contact
AlGaN/GaN
field effect transistor
Online Access:https://eprints.nottingham.ac.uk/1463/

Internet

https://eprints.nottingham.ac.uk/1463/

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