Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN

A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KOH treatment, mirrored in a reduction in the magnit...

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Main Authors: Moldovan, Grigore, Harrison, Ian, Roe, Martin, Brown, Paul D.
Other Authors: McVitie, Stephen
Format: Book Section
Published: Institute of Physics Publishing 2004
Subjects:
Online Access:https://eprints.nottingham.ac.uk/1444/
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author Moldovan, Grigore
Harrison, Ian
Roe, Martin
Brown, Paul D.
author2 McVitie, Stephen
author_facet McVitie, Stephen
Moldovan, Grigore
Harrison, Ian
Roe, Martin
Brown, Paul D.
author_sort Moldovan, Grigore
building Nottingham Research Data Repository
collection Online Access
description A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KOH treatment, mirrored in a reduction in the magnitude of the EBIC current, even though the EBIC images look visibly unaltered. XPS demonstrates a modification in the surfaces states, e.g. resulting in a –0.3eV shift in the binding energy of Ga3d for MBE GaN following KOH processing.
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institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T18:15:18Z
publishDate 2004
publisher Institute of Physics Publishing
recordtype eprints
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spelling nottingham-14442020-05-04T20:31:38Z https://eprints.nottingham.ac.uk/1444/ Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN Moldovan, Grigore Harrison, Ian Roe, Martin Brown, Paul D. A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KOH treatment, mirrored in a reduction in the magnitude of the EBIC current, even though the EBIC images look visibly unaltered. XPS demonstrates a modification in the surfaces states, e.g. resulting in a –0.3eV shift in the binding energy of Ga3d for MBE GaN following KOH processing. Institute of Physics Publishing McVitie, Stephen McComb, David 2004 Book Section PeerReviewed Moldovan, Grigore, Harrison, Ian, Roe, Martin and Brown, Paul D. (2004) Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN. In: Electron microscopy and analysis 2003: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 115-118. ISBN 0750309679 I-V EBIC XPS GaN
spellingShingle I-V EBIC XPS GaN
Moldovan, Grigore
Harrison, Ian
Roe, Martin
Brown, Paul D.
Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
title Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
title_full Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
title_fullStr Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
title_full_unstemmed Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
title_short Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
title_sort correlation of electrical and structural properties of au contacts to koh treated n-gan
topic I-V EBIC XPS GaN
url https://eprints.nottingham.ac.uk/1444/