Electrical and optical studies of dilute nitride and bismide compound semiconductors

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Electrical and optical studies of dilute nitride and bismide compound semiconductors

A few percent of nitrogen (N) or bimuth (Bi) incorporation in GaAs compound semiconductors have proved to lower significantly its bandgap. This unusual bandgap reduction is of interest for numerous applications such as long wave-length lasers, solar cells etc. However, the addition of these impurity...

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Bibliographic Details
Main Author:	Shafi, Muhammad
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2011
Subjects:	Compound semiconductors Deep level transient spectroscopy Photoluminescence Nitrogen Bismuth
Online Access:	https://eprints.nottingham.ac.uk/13785/

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