Study of cubic III-V nitrides for device applications

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Study of cubic III-V nitrides for device applications

This thesis describes the optimisation of the growth of bulk cubic GaN with low hexagonal content and with the intention of making it a commercial substrate for device applications. The optimised material was then applied for fabrication of cubic AlxGa1-xN/GaN based double barrier resonant tunnellin...

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Bibliographic Details
Main Author:	Zainal, Norzaini Binti
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2010
Online Access:	https://eprints.nottingham.ac.uk/11449/

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