Study of cubic III-V nitrides for device applications
This thesis describes the optimisation of the growth of bulk cubic GaN with low hexagonal content and with the intention of making it a commercial substrate for device applications. The optimised material was then applied for fabrication of cubic AlxGa1-xN/GaN based double barrier resonant tunnellin...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2010
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| Online Access: | https://eprints.nottingham.ac.uk/11449/ |