Growth and structural characterisation of novel III-V semiconductor materials

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Growth and structural characterisation of novel III-V semiconductor materials

This thesis describes the growth and characterisation of four different III-V semiconductor materials. Growth was primarily performed by molecular beam epitaxy, while characterisation, which was largely structural, was carried out mainly using X-ray difraction and atomic force microscopy. Growth of...

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Bibliographic Details
Main Author:	Hall, Jacqueline Lesley
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2010
Online Access:	https://eprints.nottingham.ac.uk/11377/

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