Growth and structural characterisation of novel III-V semiconductor materials
This thesis describes the growth and characterisation of four different III-V semiconductor materials. Growth was primarily performed by molecular beam epitaxy, while characterisation, which was largely structural, was carried out mainly using X-ray difraction and atomic force microscopy. Growth of...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2010
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| Online Access: | https://eprints.nottingham.ac.uk/11377/ |