Tunneling injection and recombination of carriers in self-assembled quantum dots
This thesis describes an experimental investigation of the resonant injection of carriers into self-assembled indium arsenide (InAs) quantum dots incorporated in the intrinsic region of gallium arsenide (GaAs) p-i-n resonant tunneling diodes, and of the resulting electroluminescence spectrum associa...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2009
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| Online Access: | https://eprints.nottingham.ac.uk/10757/ |