Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy

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Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy

GaMnN layers grown by plasma assisted molecular beam epitaxy (PAMBE) as a function of Ga/N ratio, Mn flux and growth temperature are assessed using a variety of structural characterisation techniques. At 680 C, the Ga/N ratio is found to have a dominant impact on the zinc-blende GaMnN epilayer growt...

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Bibliographic Details
Main Author:	Han, Yisong
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2006
Subjects:	cubic GaN Mn-doped GaMnN zinc-blende ferromagnetic transmission electron microscopy TEM
Online Access:	https://eprints.nottingham.ac.uk/10332/

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