Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy
GaMnN layers grown by plasma assisted molecular beam epitaxy (PAMBE) as a function of Ga/N ratio, Mn flux and growth temperature are assessed using a variety of structural characterisation techniques. At 680 C, the Ga/N ratio is found to have a dominant impact on the zinc-blende GaMnN epilayer growt...
| Main Author: | |
|---|---|
| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2006
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/10332/ |