Nanosecond laser ablation and deposition of silicon

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Nanosecond laser ablation and deposition of silicon

Nanosecond-pulsed KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) lasers were used to ablate a polycrystalline Si target in a background pressure of < 10(-4) Pa. Si films were deposited on Si and GaAs substrates at room temperature. The surface morphology of the films was character...

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Bibliographic Details
Main Authors:	Siew, Wee Ong, Yap, Seong Shan, Ladam, Cécile, Dahl, Øystein, Reenaas, Turid Worren, Tou, Teck Yong
Format:	Article
Language:	English
Published:	2011
Subjects:	QC Physics
Online Access:	http://shdl.mmu.edu.my/3366/ http://shdl.mmu.edu.my/3366/1/34.pdf

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