Nanosecond laser ablation and deposition of silicon
Nanosecond-pulsed KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) lasers were used to ablate a polycrystalline Si target in a background pressure of < 10(-4) Pa. Si films were deposited on Si and GaAs substrates at room temperature. The surface morphology of the films was character...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/3366/ http://shdl.mmu.edu.my/3366/1/34.pdf |