Current impulse response of thin InP p+–i–n+ diodes

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Current impulse response of thin InP p+–i–n+ diodes

The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included...

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Bibliographic Details
Main Authors:	YOU, A, CHEANG, P
Format:	Article
Language:	English
Published:	ELSEVIER SCI LTD 2006
Subjects:	T Technology (General) QA75.5-76.95 Electronic computers. Computer science
Online Access:	http://shdl.mmu.edu.my/3258/ http://shdl.mmu.edu.my/3258/1/1291.pdf

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