Current impulse response of thin InP p+–i–n+ diodes
The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
ELSEVIER SCI LTD
2006
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/3258/ http://shdl.mmu.edu.my/3258/1/1291.pdf |