Current impulse response of thin InP p+–i–n+ diodes
The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included...
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| Format: | Article |
| Language: | English |
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ELSEVIER SCI LTD
2006
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| Online Access: | http://shdl.mmu.edu.my/3258/ http://shdl.mmu.edu.my/3258/1/1291.pdf |
| _version_ | 1848790278141378560 |
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| author | YOU, A CHEANG, P |
| author_facet | YOU, A CHEANG, P |
| author_sort | YOU, A |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin APDs. Current impulse response of homojunction InP p(+)-i-n(+) diodes with the multiplication widths of 0.1 and 0.2 mu m are calculated. Our results show that dead-space gives a slower decay rate of current impulse response in thin APD, which may degrade the bit-error-rate of the optical communication systems. (c) 2006 Elsevier Ltd. All rights reserved. |
| first_indexed | 2025-11-14T18:10:04Z |
| format | Article |
| id | mmu-3258 |
| institution | Multimedia University |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T18:10:04Z |
| publishDate | 2006 |
| publisher | ELSEVIER SCI LTD |
| recordtype | eprints |
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| spelling | mmu-32582014-03-04T07:10:19Z http://shdl.mmu.edu.my/3258/ Current impulse response of thin InP p+–i–n+ diodes YOU, A CHEANG, P T Technology (General) QA75.5-76.95 Electronic computers. Computer science The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin APDs. Current impulse response of homojunction InP p(+)-i-n(+) diodes with the multiplication widths of 0.1 and 0.2 mu m are calculated. Our results show that dead-space gives a slower decay rate of current impulse response in thin APD, which may degrade the bit-error-rate of the optical communication systems. (c) 2006 Elsevier Ltd. All rights reserved. ELSEVIER SCI LTD 2006-11 Article NonPeerReviewed text en http://shdl.mmu.edu.my/3258/1/1291.pdf YOU, A and CHEANG, P (2006) Current impulse response of thin InP p+–i–n+ diodes. Microelectronics Journal, 37 (11). 1285-1288 . ISSN 00262692 http://dx.doi.org/10.1016/j.mejo.2006.07.009 doi:10.1016/j.mejo.2006.07.009 doi:10.1016/j.mejo.2006.07.009 |
| spellingShingle | T Technology (General) QA75.5-76.95 Electronic computers. Computer science YOU, A CHEANG, P Current impulse response of thin InP p+–i–n+ diodes |
| title | Current impulse response of thin InP p+–i–n+ diodes |
| title_full | Current impulse response of thin InP p+–i–n+ diodes |
| title_fullStr | Current impulse response of thin InP p+–i–n+ diodes |
| title_full_unstemmed | Current impulse response of thin InP p+–i–n+ diodes |
| title_short | Current impulse response of thin InP p+–i–n+ diodes |
| title_sort | current impulse response of thin inp p+–i–n+ diodes |
| topic | T Technology (General) QA75.5-76.95 Electronic computers. Computer science |
| url | http://shdl.mmu.edu.my/3258/ http://shdl.mmu.edu.my/3258/ http://shdl.mmu.edu.my/3258/ http://shdl.mmu.edu.my/3258/1/1291.pdf |