Modelling Of Single Photon Avalanche Diodes

The avalanche dynamics in single photon avalanche diodes (SPADs) in the form of GaAs p+ -i-n+ diode structures was investigated theoretically using a simple random ionisation path length (RPL) MODEL. In the RPL model, the avalanche multiplication process in the i-region of a diode is modelled by gen...

Full description

Bibliographic Details
Main Author: Li, Tan Siew
Format: Thesis
Published: 2008
Subjects:
Online Access:http://shdl.mmu.edu.my/321/