Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method

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Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method

A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random...

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Bibliographic Details
Main Authors:	You, A. H., Cheang, P. L.
Format:	Article
Published:	AMER INST PHYSICS 2007
Subjects:	T Technology (General) QC Physics
Online Access:	http://shdl.mmu.edu.my/3107/

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