Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method
A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random...
| Main Authors: | , |
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| Format: | Article |
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AMER INST PHYSICS
2007
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| Online Access: | http://shdl.mmu.edu.my/3107/ |