Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method
A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random...
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| Format: | Article |
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AMER INST PHYSICS
2007
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| Online Access: | http://shdl.mmu.edu.my/3107/ |
| _version_ | 1848790235942486016 |
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| author | You, A. H. Cheang, P. L. |
| author_facet | You, A. H. Cheang, P. L. |
| author_sort | You, A. H. |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p(+)-i-n(+) diodes with the multiplication region of 0.2 mu m is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p(+)-i-n(+) diodes with multiplication lengths of 0.05 and 0.2 mu m using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.(c) 2007 American Institute of Physics. |
| first_indexed | 2025-11-14T18:09:24Z |
| format | Article |
| id | mmu-3107 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:09:24Z |
| publishDate | 2007 |
| publisher | AMER INST PHYSICS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-31072011-10-18T07:01:08Z http://shdl.mmu.edu.my/3107/ Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method You, A. H. Cheang, P. L. T Technology (General) QC Physics A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p(+)-i-n(+) diodes with the multiplication region of 0.2 mu m is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p(+)-i-n(+) diodes with multiplication lengths of 0.05 and 0.2 mu m using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.(c) 2007 American Institute of Physics. AMER INST PHYSICS 2007-02 Article NonPeerReviewed You, A. H. and Cheang, P. L. (2007) Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method. Journal of Applied Physics, 101 (4). 044502. ISSN 00218979 http://dx.doi.org/10.1063/1.2434827 doi:10.1063/1.2434827 doi:10.1063/1.2434827 |
| spellingShingle | T Technology (General) QC Physics You, A. H. Cheang, P. L. Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method |
| title | Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method |
| title_full | Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method |
| title_fullStr | Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method |
| title_full_unstemmed | Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method |
| title_short | Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method |
| title_sort | current impulse response of thin inp p[sup +]-i-n[sup +] diodes using full band structure monte carlo method |
| topic | T Technology (General) QC Physics |
| url | http://shdl.mmu.edu.my/3107/ http://shdl.mmu.edu.my/3107/ http://shdl.mmu.edu.my/3107/ |