Effect of Ar pressure on grain size of magnetron sputter-deposited Cu thin films

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Effect of Ar pressure on grain size of magnetron sputter-deposited Cu thin films

Copper (Cu) thin films with thicknesses ranging from 300 to 425 nm were prepared at various argon (Ar) pressures on p-type silicon substrates by direct current magnetron sputtering deposition. X-ray diffraction (XRD) and Karl Suss four-point probe were employed to study the film crystallinity and co...

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Bibliographic Details
Main Authors:	Chan, K.Y., Teo, B.S.
Format:	Article
Language:	English
Published:	INST ENGINEERING TECHNOLOGY-IET 2007
Subjects:	T Technology (General) QA75.5-76.95 Electronic computers. Computer science
Online Access:	http://shdl.mmu.edu.my/3104/ http://shdl.mmu.edu.my/3104/1/118.pdf

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