Effect of Ar pressure on grain size of magnetron sputter-deposited Cu thin films
Copper (Cu) thin films with thicknesses ranging from 300 to 425 nm were prepared at various argon (Ar) pressures on p-type silicon substrates by direct current magnetron sputtering deposition. X-ray diffraction (XRD) and Karl Suss four-point probe were employed to study the film crystallinity and co...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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INST ENGINEERING TECHNOLOGY-IET
2007
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| Online Access: | http://shdl.mmu.edu.my/3104/ http://shdl.mmu.edu.my/3104/1/118.pdf |