Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors
GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter...
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AMER INST PHYSICS
2007
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| Online Access: | http://shdl.mmu.edu.my/3068/ |
| _version_ | 1848790225048829952 |
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| author | Poh, Z. S. Yow, H. K. Ong, D. S. Houston, P. A. Krysa, A. B. |
| author_facet | Poh, Z. S. Yow, H. K. Ong, D. S. Houston, P. A. Krysa, A. B. |
| author_sort | Poh, Z. S. |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, V(CE), by maximizing the collector-emitter voltage at the onset of the multiplication, V(CE,onset), to 20 V, while minimizing the saturation voltage, V(CE,sat) (< 1 V), and maintaining the nominal breakdown voltage, BV(CEO), of the GaInP collector at 25 V. The design incorporating an Al(0.11)Ga(0.89)As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior. (c) 2007 American Institute of Physics. |
| first_indexed | 2025-11-14T18:09:13Z |
| format | Article |
| id | mmu-3068 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:09:13Z |
| publishDate | 2007 |
| publisher | AMER INST PHYSICS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-30682011-09-29T03:55:08Z http://shdl.mmu.edu.my/3068/ Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors Poh, Z. S. Yow, H. K. Ong, D. S. Houston, P. A. Krysa, A. B. T Technology (General) QC Physics GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, V(CE), by maximizing the collector-emitter voltage at the onset of the multiplication, V(CE,onset), to 20 V, while minimizing the saturation voltage, V(CE,sat) (< 1 V), and maintaining the nominal breakdown voltage, BV(CEO), of the GaInP collector at 25 V. The design incorporating an Al(0.11)Ga(0.89)As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior. (c) 2007 American Institute of Physics. AMER INST PHYSICS 2007-04 Article NonPeerReviewed Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979 http://dx.doi.org/10.1063/1.2721957 doi:10.1063/1.2721957 doi:10.1063/1.2721957 |
| spellingShingle | T Technology (General) QC Physics Poh, Z. S. Yow, H. K. Ong, D. S. Houston, P. A. Krysa, A. B. Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors |
| title | Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors |
| title_full | Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors |
| title_fullStr | Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors |
| title_full_unstemmed | Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors |
| title_short | Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors |
| title_sort | dead-space corrected gainp/gaas composite collector double heterojunction bipolar transistors |
| topic | T Technology (General) QC Physics |
| url | http://shdl.mmu.edu.my/3068/ http://shdl.mmu.edu.my/3068/ http://shdl.mmu.edu.my/3068/ |