Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors

Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors

GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter...

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Bibliographic Details
Main Authors: Poh, Z. S., Yow, H. K., Ong, D. S., Houston, P. A., Krysa, A. B.
Format: Article
Published: AMER INST PHYSICS 2007
Subjects:
T Technology (General)
QC Physics
Online Access:http://shdl.mmu.edu.my/3068/

Internet

http://shdl.mmu.edu.my/3068/

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