Prospective development in diffusion barrier layers for copper metallization in LSI

The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion...

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Main Authors: Wong, H.Y., Mohd Shukor, N.F., Amin, N.
Format: Article
Language:English
Published: ELSEVIER SCI LTD 2007
Subjects:
Online Access:http://shdl.mmu.edu.my/3050/
http://shdl.mmu.edu.my/3050/1/1073.pdf
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author Wong, H.Y.
Mohd Shukor, N.F.
Amin, N.
author_facet Wong, H.Y.
Mohd Shukor, N.F.
Amin, N.
author_sort Wong, H.Y.
building MMU Institutional Repository
collection Online Access
description The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage. (C) 2007 Elsevier Ltd. All rights reserved.
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spelling mmu-30502014-02-27T07:30:00Z http://shdl.mmu.edu.my/3050/ Prospective development in diffusion barrier layers for copper metallization in LSI Wong, H.Y. Mohd Shukor, N.F. Amin, N. T Technology (General) QA75.5-76.95 Electronic computers. Computer science The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage. (C) 2007 Elsevier Ltd. All rights reserved. ELSEVIER SCI LTD 2007-06 Article NonPeerReviewed text en http://shdl.mmu.edu.my/3050/1/1073.pdf Wong, H.Y. and Mohd Shukor, N.F. and Amin, N. (2007) Prospective development in diffusion barrier layers for copper metallization in LSI. Microelectronics Journal, 38 (6-7). pp. 777-782. ISSN 00262692 http://dx.doi.org/10.1016/j.mejo.2007.04.011 doi:10.1016/j.mejo.2007.04.011 doi:10.1016/j.mejo.2007.04.011
spellingShingle T Technology (General)
QA75.5-76.95 Electronic computers. Computer science
Wong, H.Y.
Mohd Shukor, N.F.
Amin, N.
Prospective development in diffusion barrier layers for copper metallization in LSI
title Prospective development in diffusion barrier layers for copper metallization in LSI
title_full Prospective development in diffusion barrier layers for copper metallization in LSI
title_fullStr Prospective development in diffusion barrier layers for copper metallization in LSI
title_full_unstemmed Prospective development in diffusion barrier layers for copper metallization in LSI
title_short Prospective development in diffusion barrier layers for copper metallization in LSI
title_sort prospective development in diffusion barrier layers for copper metallization in lsi
topic T Technology (General)
QA75.5-76.95 Electronic computers. Computer science
url http://shdl.mmu.edu.my/3050/
http://shdl.mmu.edu.my/3050/
http://shdl.mmu.edu.my/3050/
http://shdl.mmu.edu.my/3050/1/1073.pdf