Prospective development in diffusion barrier layers for copper metallization in LSI
The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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ELSEVIER SCI LTD
2007
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/3050/ http://shdl.mmu.edu.my/3050/1/1073.pdf |
| _version_ | 1848790220059705344 |
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| author | Wong, H.Y. Mohd Shukor, N.F. Amin, N. |
| author_facet | Wong, H.Y. Mohd Shukor, N.F. Amin, N. |
| author_sort | Wong, H.Y. |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage. (C) 2007 Elsevier Ltd. All rights reserved. |
| first_indexed | 2025-11-14T18:09:09Z |
| format | Article |
| id | mmu-3050 |
| institution | Multimedia University |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T18:09:09Z |
| publishDate | 2007 |
| publisher | ELSEVIER SCI LTD |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-30502014-02-27T07:30:00Z http://shdl.mmu.edu.my/3050/ Prospective development in diffusion barrier layers for copper metallization in LSI Wong, H.Y. Mohd Shukor, N.F. Amin, N. T Technology (General) QA75.5-76.95 Electronic computers. Computer science The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage. (C) 2007 Elsevier Ltd. All rights reserved. ELSEVIER SCI LTD 2007-06 Article NonPeerReviewed text en http://shdl.mmu.edu.my/3050/1/1073.pdf Wong, H.Y. and Mohd Shukor, N.F. and Amin, N. (2007) Prospective development in diffusion barrier layers for copper metallization in LSI. Microelectronics Journal, 38 (6-7). pp. 777-782. ISSN 00262692 http://dx.doi.org/10.1016/j.mejo.2007.04.011 doi:10.1016/j.mejo.2007.04.011 doi:10.1016/j.mejo.2007.04.011 |
| spellingShingle | T Technology (General) QA75.5-76.95 Electronic computers. Computer science Wong, H.Y. Mohd Shukor, N.F. Amin, N. Prospective development in diffusion barrier layers for copper metallization in LSI |
| title | Prospective development in diffusion barrier layers for copper metallization in LSI |
| title_full | Prospective development in diffusion barrier layers for copper metallization in LSI |
| title_fullStr | Prospective development in diffusion barrier layers for copper metallization in LSI |
| title_full_unstemmed | Prospective development in diffusion barrier layers for copper metallization in LSI |
| title_short | Prospective development in diffusion barrier layers for copper metallization in LSI |
| title_sort | prospective development in diffusion barrier layers for copper metallization in lsi |
| topic | T Technology (General) QA75.5-76.95 Electronic computers. Computer science |
| url | http://shdl.mmu.edu.my/3050/ http://shdl.mmu.edu.my/3050/ http://shdl.mmu.edu.my/3050/ http://shdl.mmu.edu.my/3050/1/1073.pdf |